Model Code (Capacity)
MZ-V9P1T0BW (1TB)
General Feature
APPLICATION
Client PCs, Game Consoles
FORM FACTOR
M.2 (2280)
INTERFACE
PCIe Gen 4.0 x4, NVMe 2.0
DIMENSION (WxHxD)
80 x 22 x 2.3 mm
WEIGHT
Max 9.0g Weight
STORAGE MEMORY
Samsung V-NAND 3-bit MLC
CONTROLLER
Samsung in-house Controller
CACHE MEMORY
Samsung 1GB Low Power DDR4 SDRAM (1TB) Samsung 2GB Low Power DDR4 SDRAM(2TB)
Special Feature
TRIM SUPPORT
Supported
S.M.A.R.T SUPPORT
Supported  GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
ENCRYPTION SUPPORT
AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
WWN SUPPORT
Not supported
DEVICE SLEEP MODE SUPPORT
Yes
Performance
SEQUENTIAL READ
1TB: Up to 7,450 MB/s 2TB: Up to 7,450 MB/s
 SEQUENTIAL WRITE
1TB: Up to 6,900 MB/s 2TB: Up to 6,900 MB/s
RANDOM READ (4KB, QD32)
1TB: Up to 1,200,000 IOPS 2TB: Up to 1,400,000 IOPS
RANDOM WRITE (4KB, QD32)
1TB: Up to 1,550,000 IOPS 2TB: Up to 1,550,000 IOPS
RANDOM READ (4KB, QD1)
1TB: Up to 22,000 IOPS 2TB: Up to 22,000 IOPS
RANDOM WRITE (4KB, QD1)
1TB: Up to 80,000 IOPS 2TB: Up to 80,000 IOPS
Environment
AVERAGE POWER CONSUMPTION (SYSTEM LEVEL)
1TB: Average 5.4 W Maximum 7.8 W (Burst mode) 2TB: Average 5.5 W Maximum 8.5 W (Burst mode)
POWER CONSUMPTION (IDLE)
1TB: Max. 50 mW 2TB: Max. 55 mW
POWER CONSUMPTION (DEVICE SLEEP)
1TB: Max. 5 mW 2TB: Max. 5 mW
ALLOWABLE VOLTAGE
3.3 V ± 5 % Allowable voltage
RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
OPERATING TEMPERATURE
0 - 70 ℃ Operating Temperature
SHOCK
1,500 G & 0.5 ms (Half sine) |